Crystal Substrate A-Z

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Ge Wafer (100) Undoped, 2" dia x 0.5 mm, resistivities: >50 ohm-cm, 2SP - GEUa50D05C2R50US

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Ge Wafer (100) 2" dia x 1.0 mm, 1SP, N type (Sb doped), resistivities: 0.02 ohm-cm - GEsba50D10c1R002US

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Ge N-type SB-doped (111) 5x5x0.5mm 1sp, R: 0.005-0.01 ohm.cm

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Ge (111), Flat-(1-10), N-type, Sb-doped, 10x10x0.5mm, 1sp, R:0.005-0.01 ohm.cm

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GdScO3 (110) 5x5x0.5mm 2sp

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GdScO3 (110) 5x5x0.5mm 1sp - GSOe050505S1US

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GdScO3 (110) 10x10x0.5mm 2sp

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GdScO3 (110) 10x10x0.5mm 1sp

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GdScO3 (001)10x10x0.5mm 1sp - GSOb101005S1US

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GaSb, (100), Zn- doped,, P-type, 2" dia x 0.45mm, 1sp,Carrier concentration: (5.8)x10^18 cm^-3

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GaSb, (100), Zn- doped, P-type, 2" dia x 0.45mm, 1sp,Carrier concentration:(1-3)x10^17 cm^-3

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GaSb Wafer (111)-B, undoped,P-type 2"x0.5 mm ,2sp

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GaSb Wafer (100), undoped, 5x5x0.5 mm, 1sp

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GaSb Wafer (100), undoped, 2"x0.5 mm two sides polished - GSUa50D05C2US

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GaSb Wafer (100), undoped, 2"x0.5 mm ,1sp

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GaSb Wafer (100), undoped, 10x10x0.5 mm, 1sp - GSUa101005S1

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GaSb (100), N Type, Te doped, 2"D x0.5mm wafer 1sp Carrier Concentration: (1-8)x10^17 cm^-3

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GaP Wafer, Zn-doped, (111)B, 2"x0.45 mm, 1sp

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GaP Wafer, Zn-doped (111) 2"x0.45 mm, 1sp

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GaP Wafer, Undoped (111) 3"x0.45 mm, 1sp