MTI | SKU: GSUcB50D05C2US

GaSb Wafer (111)-B, undoped,P-type 2"x0.5 mm ,2sp

€918,85

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GaSb Wafer (111)-B, undoped,P-type 2"x0.5 mm ,2sp

MTI

Wafer Specifications:.

Size: 2" diameter x 0.5 mm,
Orientation: (111)-B
Flats: SEMI PF <01-1>. SF<0-11>
Dopping: undoped,
Conducting type: P-type.
Polish: Two side EPI -ready polished
Resistivity: N/A
Mobility: 600-700cm^2/Vs
Carrier concentration: (1-3)x10^17 ohm.cm
EPD : <2000 cm^-2
Packing: 1000 class clean room in a single wafer container
Surface finish (RMS or Ra) : < 5A

Dopant	Type	Carrier Concentration ( cm^-3)	Mobility ( cm²/V.Sec)	Resistivity ( ohm-cm )	EPD (cm^-2)
Undoped	P	1.0~2.0 x 10¹⁷	600 ~ 800	~0.1	<10000
Zn	P⁺	2.0~5.0 x 10¹⁸	300 ~ 500	~0.004	<10000
Te	N	2.0~6.0 x 10¹⁷	2500 ~ 3500	~0.05	<10000
High Resistivity	P or N	1.0~2.0 x 10¹⁶	460	~ 1.0	<10000

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