Crystal Substrate A-Z

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Ge Wafer(100). 100mm dia x 0.5 mm, 2SP, P type (Ga doped) R: 0.004-0.01ohm.cm - GEGaa100D05C2BeR0004US

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Ge Wafer(100) . 100mm dia x 0.5 mm, 2SP, P type ( Ga doped) R:1.4-1.7 ohm.cm

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Ge Wafer Undoped (110) 3" dia x 0.5 mm 2 side polished resistivity: >50 ohm-cm

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Ge Wafer Undoped (110) 3" dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm

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Ge Wafer Undoped (100) 3" dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm - GEUa76D05C1R50US

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Ge Wafer - N-type Undoped, 2" dia x 0.5 mm, 1SP (111), R >50 ohm.cm - GEUc50D05C1R50US

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Ge Wafer ,N-type Undoped (100) 3" dia x 0.5 mm 2 side polished resistivity: >50 ohm-cm

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Ge Wafer (211) N-type Undoped, 2" dia x 0.45 mm, 2SP, Resistivities: > 45 ohm.cm

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Ge Wafer (211) N-type Undoped, 2" dia x 0.45 mm, 1SP, resistivities: >45 ohm-cm

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Ge Wafer (111)+/-1.5 degree, Un doped, 2"x0.5 mm, 1SP, R>50 ohm-cm

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Ge Wafer (111) with 9.45 degree miscut , 2" dia x 0.5 mm, 1SP, N type ( Sb doped), resistivities: 0.1-0.5ohm-cm

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Ge Wafer (111) Undoped, 1" dia x 0.5 mm ,2SP, R:>50 ohm.cm

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Ge Wafer (111) N-type Undoped, 1" dia x 0.5 mm ,1SP, R:>50 ohm.cm

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Ge Wafer (111) 4" dia x 0.5 mm, 2SP, N type ( Sb- doped)with resistivities: 0.014-0.022 Ohms-cm

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Ge Wafer (111) 4" dia x 0.5 mm, 1SP, N type ( Sb- doped) with resistivities: 0.014-0.022 Ohms-cm

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Ge Wafer (111) 2" dia x 0.5 mm, 2SP, P type ( Ga doped) resistivities: 0.005-0.01ohm-cm

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Ge Wafer (111) 2" dia x 0.5 mm, 2SP, N type (Sb doped), resistivities: 0.1-1.0 ohm-cm - GEsbc50D05C2R01US

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Ge Wafer (111) 2" dia x 0.5 mm, 2SP, N type ( Sb doped), R: 10-20 ohm-cm

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Ge Wafer (111) 2" dia x 0.4 mm, 2SP, P type ( Ga doped) Resistivities: 0.035-0.039ohm-cm

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Ge Wafer (111) 2" dia x 0..5 mm, 2SP, N type ( Sb doped), R: 0.05-0.5 ohm-cm