Crystal Substrate A-Z

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GaN Template ( 200nm) on Silicon Wafer, GaN (N type, undoped), Si(111) N-type P-doped,10x10x0.279mm,1sp R:1-10 ohm.cm

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GaN Single Crystal Substrate,N-type, (10-10), 5 x10 x 0.3 mm , 1SP

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GaN -Single Crystal Substrate,N-type, (0001), 10x10.5x0.35 mm , 1SP

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GaN -Single Crystal Substrate,N-type, (0001), 10x10.5x0.3 mm , 2SP

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GaN -Single Crystal Substrate (0001), Semi-Insulating, 10x10x0.475 mm, 1SP, Production Grade - GaNC10100475S1SemiBUS5

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GaN -Single Crystal Substrate (0001), N type, 10x10x0.475 mm, 1SP - GaNC10100475S1NSUS5

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GaN -Single Crystal Substrate (0001), N type, 10x10.5x0.27 mm , 1SP

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GaN -Single Crystal Substrate (0001), 50.8mm x 0.25 mm , N+ type, 1SP

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GaN -Single Crystal Substrate (0001), 50.8mm x 0. 25 mm , N+ type, 2SP

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GaN ,N-type ,Si doped (0001) 10x10.5x0.35mm,1sp- Ga-face polished

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GaN , N-type , Si doped (0001) 10x10.5x0.35mm,2sp

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GaN (0001) 10x10.5x0.35mm,2sp ,Semi-insulating

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GaN (0001) 10x10.5x0.35mm,1sp, Semi-insulating

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GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 2sp - GAUe50D05C2-US

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GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 1sp,

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GaAs, VGF Grown (110) ori. un-doped, Semi-Insulating, 20x20x0.5mm, 1sp

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GaAs, VGF Grown (110) ori. un-doped, 10x10x0.5mm, 1sp

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GaAs, VGF Grown (110) ori. N type, Si-doped, 5 x 5 x 0.3 mm, 2sp

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GaAs, VGF Grown (110) ori. N type, Si-doped, 2" dia x 0.35mm, 1sp

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GaAs, VGF Grown (110) ori. N type, Si-doped, 10x10x0.3mm, 2sp