GaSb Wafer (100), undoped, 10x10x0.5 mm, 1sp - GSUa101005S1

Wafer Specifications:. 

• Size:                      10x10 x 0.5mm,
• Orientation:          (100)
• Dopping:              undoped,
• Conducting type: P-type.
• Polish:                   one side polished by CMP
• Packing:               1000 class clean room in a single wafer container           

   Typical Properties

• Crystal Structure:                                cubic a = 6.095 Å
• Density:                                                 5.619 g/cm³
• Melting point:                                        710 ^oC
• Grown by a special LEC technique , EPD :<10^4/cm². 
• Carrier concentration:                   ( 1-2)x10^17 cm^-3
• Mobility:                                         600-700 cm^2/Vs
• EPD                                               <3000 cm^-2
• Thermal Expansion:                           6.1 x 10 ^-6 /oK
• Thermal conductivity:                          270 mW / cm.k   at 300K

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