Ge Wafer (100) 2" dia x 1.0 mm, 1SP, N type (Sb doped), resistivities: 0.02 ohm-cm - GEsba50D10c1R002US

Ge Wafer Specification

• Growing Method:             CZ
• Orientation:                      (100) +/-0.5 Deg.
• Wafer Size:                      2" dia x  1000 microns  
• Surface Polishing:            one side epi polished
• Surface roughness:          < 8 A ( by AFM)
• Doping:                           Sb Doped
• Conductor type:                N-type
• Resistivity:                     0.02 Ohms/cm
• EPD:                            
• Package:                         under 1000 class clean room      

Typical Properties:

• Structure:                        Cubic, a = 5.6754 Å

• Density:                          5.323 g/cm3 at room temperature

• Melting Point:                  937.4 ^oC

• Thermal Conductivity:       640