Crystal Substrate A-Z

MTI

Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 2SP Resistivity: 1-5 ohm.cm

MTI

Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 2SP Resistivity: 0.1-0.5ohm.cm

MTI

Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 1SP Resistivity: 1-5 ohm.cm

MTI

Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 1SP Resistivity: 0.1-1.0 ohm.cm - GESbe50D05C1R01US

MTI

Ge Wafer (110) N-type Undoped, 4" dia x 0.5 mm, 2SP,R>50ohm.cm - GEUe101D05C2R50US

MTI

Ge Wafer (110) N-type Undoped, 4" dia x 0.5 mm, 1SP,R:>50 ohm.cm

MTI

Ge Wafer (110) N-type Undoped, 2" dia x 0.5 mm, 2SP,R:>50 ohm.cm - GEUe50D05C2R50US

MTI

Ge Wafer (110) N-type Undoped, 2" dia x 0.5 mm, 1SP, R:>50 ohm.cm

MTI

Ge Wafer (110) N-type Undoped, 1" dia x 0.5 mm , 2SP,R:>50 ohm.cm

MTI

Ge Wafer (110) N-type Undoped, 1" dia x 0.5 mm , 1SP,R:>50 ohm.cm

MTI

Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, 2SP Resistivity : 0.1-0.5 ohm-cm - GEGae50D05C2R01US

MTI

Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, 1SP Resistivity : 1-10 ohm-cm

MTI

Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, 1SP Resistivity : 0.1-1.1 ohm-cm

MTI

Ge Wafer (110) 4" dia x 0.5 mm,2SP, N type ( Sb doped) R:1-5 ohm.cm

MTI

Ge Wafer (110) 4" dia x 0.5 mm,2SP, N type ( Sb doped) R:0.1-0.5ohm.cm

MTI

Ge Wafer (100)N-type Undoped, 1" dia x 0.5 mm , 2SP,R:>50 ohm.cm - GEUa25D05C2R50

MTI

Ge Wafer (100)+/-1.5 degree, Un doped, 2"x0.5 mm, 1SP, R>50 ohm-cm

MTI

Ge Wafer (100) with major flat <110> 100mm dia x 0.5 mm, 1SP, N type (Sb doped) R:0.1-0.5 ohm.cm - GESba100D05C1BeR01US5

MTI

Ge Wafer (100) with flat (100) 4" dia x 0.5 mm, 1SP, N type (Sb doped) Resistivities: 0.1-0.5 ohm-cm - GESba100D05C1R01US

MTI

Ge Wafer (100) Undoped, 4" dia x 0.5 mm, 2SP, R:>50 ohm-cm