MTI  |  SKU: GPZnc50D045C1US

GaP Wafer, Zn-doped (111) 2"x0.45 mm, 1sp

€799,25

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GaP Wafer, Zn-doped (111) 2"x0.45 mm, 1sp

MTI


Specifications:
  • GaP single crystal wafer
  • Doping: Zn-doped
  • Type of conductivity: P
  • Orientation: (111)
  • Size: 2" diameter x 0.45 mm
  • Polished: one side polished
  • Resistivity:(6.91-7.50) E-2 ohm.cm
  • Mobility: (63-65) cmE2/Vs
  • Carrier Concentration: (1.28-1.39)E18cmE-3
  • EPD: <= 8E4 cmE-2
  • Surface finish (RMS or Ra) : < 8A


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