Crystal Substrate A-Z

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InSb (100) 5 x 5 x 0.3 mm, N type, Te doped, 1 side polished

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InSb (100) 2" dia x 0.5 mm, Undoped, N type, 1 side polished - ISUa50D05C1US

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InSb (100) 2" dia x 0.5 mm, Te doped, N type, 2 side polished

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InSb (100) 2" dia x 0.5 mm, N type Undoped, 2 sides polished

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InSb (100) 2" dia x 0.45 mm, Te doped, N type, 1 side polished - ISTea50D045C1US

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InSb (100) 2" dia x 0.45 mm, P type, Ge doped, 1 sided polished, carrier conc: (0.5-5.0)x10^17/cc - ISGea50D045C1US

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InSb (100) 10x10x 0.5mm, Undoped, N type, 2 sides polished

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InSb (100) 10x10x 0.5 mm, Undoped, N type, 1 side polished

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InSb (100) 10x10x 0.45 mm, P type, Ge doped, two side polished

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InSb (100) 10x10x 0.45 mm, P type, Ge doped, 1 side polished

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InSb (100) 10x10x 0.45 mm, N type, Te doped, 1 side polished

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InSb (100) 10x10x 0.3 mm, N type, Te doped, 1 side polished

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InP-VGF- (100) S doped, 10x10x0.5mm wafer, 2sp - IPSa101005S2US

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InP-VGF Grown (111)B undoped, 2"x0.35 mm wafer, 1sp

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InP-VGF Grown (111)B Fe doped, 2"x0.35 mm wafer, 1sp, Semi-insulating

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InP-VGF Grown (111)A undoped, 2"x0.35 mm wafer, 1sp

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InP-VGF Grown (111)A Fe doped, 2"x0.35 mm wafer, 2sp, Semi-insulating

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InP-VGF Grown (111)A Fe doped, 2"x0.35 mm wafer, 1sp, Semi-insulating - IPFecA50D035C1US

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InP-(VGF- Grown) (111)B S doped, 2"x0.35mm wafer, 1sp

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InP-(VGF- Grown) (111)A Zn- doped, P-type, 2"x 0.35mm wafer, 1sp - IPZncA50D035C1US