InSb (100) 10x10x 0.3 mm, N type, Te doped, 1 side polished

10x10x0.45 mm  InSb  wafer   (N type, Te doped)

• Size:                      10x10x0.3 mm
• Orientation            <100> +/-0.5^o  with two reference flats
•  Polishing:             one-side side polishd ( back side etched )
• Packing:                Sealed under nitrogen with single wafer comtainer  in 1000 class clean room

Properties

• Growth method                                                 LEC
• Orientation                                                         (100)  +/- 0.5^o                
• Doping                                                                Te doped
• Conductivity type                                               N type
• Carrier Concentration                                     (0.19- 0.5)E18 @77K
• Mobility                                                               >(3.58-5.6)E4 cm²/Vs
• EPD                                                                    <1200 - 1500  / cm ²

   

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