Crystal Substrate A-Z

MTI

InP-(VGF- Grown) (100) Sn doped, 2"x0.35mm wafer, 1sp

MTI

InP-(VGF- Grown) (100) S doped, 2"x0.5mm wafer, 1sp

MTI

InP, Growing Method: VGF(100) Zn doped,3 " x 0.625mm, wafer, 1sp

MTI

InP - (VGF-Grown), (111)A, S doped, 2" x 0.5mm wafer, 1sp - IPScA50D05C1US

MTI

InAs, (100), Sn doped, N-type, 10m-10m x10mm x 0.5mm 1sp - IASna101005S1

MTI

InAs (511), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS511ellipes

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InAs (411), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS411ellipes

MTI

InAs (111)A, undoped, N-type, 5mm x5mm x 0.45mm 1sp

MTI

InAs (111)A, P Type, Zn doped 5x5 x 0.45 mm, one side polished - IAZncA0505045S1US5

MTI

InAs (111)A, P Type, Zn doped 2" dia x 0.45 mm, one side polished

MTI

InAs (111)A, P Type, Zn doped 10x10 x 0.45 mm, one side polished

MTI

InAs (111)A, N type, undoped, 2" in dia x 0.45mm, 1sp

MTI

InAs (100), Undoped, 2" dia x 0.5 mm, two sides polished

MTI

InAs (100), undoped 5x5x0.45mm, 2sp

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InAs (100), undoped 30mm dia wafer 1sp - IAUa30D05C1US

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InAs (100), Undoped 2" dia x 0.5mm, one side polished

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InAs (100), undoped 10x10x0.5mm, 1sp

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InAs (100), undoped 10x10x0.45mm, 2sp

MTI

InAs (100), un-doped 5x5x0.5mm, 1sp

MTI

InAs (100), S-doped 2" dia x 0.5 mm, one side polished,cc:(1-30)E17/ cm^3 - IASa50D05C1US