InSb (100) 10x10x 0.45 mm, P type, Ge doped, 1 side polished

10x10x0.45 mm  InSb  wafer   (P type, Ge doped)

•  Size:                      10x10x0.45 mm
• Orientation            <100> +/-0.5^o  with two reference flats
•  Polishing:            one
  side polishd ( back side etched )
• Packing:               Sealed under nitrogen with single wafer comtainer  in 1000 class clean room

Properties

• Growth method                                                 LEC
• Orientation                                                         (100)  +/- 0.5^o
• Orientation Flat                                                                
• Doping                                                                Ge ndoped
• Conductivity type                                               P type
• Carrier Concentration                                     (0.05- 0.50)E17@77K

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