MTI  |  SKU: IPSa101005S2US

InP-VGF- (100) S doped, 10x10x0.5mm wafer, 2sp - IPSa101005S2US

€113,85

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InP-VGF- (100) S doped, 10x10x0.5mm wafer, 2sp - IPSa101005S2US

MTI

InP  single crystal wafer
Growing Method:                  VGF
Orientation:                         (100)
Size:                                   10x10 x 0.5 mm
Doping:                               S- doped
Conducting type:                  S-C-N
Polish:                                one side  polished
Resistivity:                          (1.8-2.0)x10^-3 ohm.cm
Mobility:                             1850-1870 cmE2/V.S
EPD:                                  <2000 /cmE2
Carrier Concerntration:         (1.7-1.9) x10^18 /cm^3
Ra(Average Roughness) :     < 0.4 nm

 

 
 
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