MTI  |  SKU: IPScB50D035C1US

InP-(VGF- Grown) (111)B S doped, 2"x0.35mm wafer, 1sp

€799,25

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InP-(VGF- Grown) (111)B S doped, 2"x0.35mm wafer, 1sp

MTI

  • InP  single crystal wafer
  • Growing Method:              VGF
  • Orientation:                      (111)B
  • Size:                               2" diameter x 0.35 mm
  • Doping:                            S- doped
  • Conducting type:              S-C-N
  • Polish:                             one side  polished
  • Resistivity:                       (1.26-1.40)x10^-3 ohm.cm
  • Mobility:                           (1540-1650) cm^2/v.s
  • EPD:                               N/A
  • Carrier Concentration:       (2.71-3.24) x10^18 /cm^3
  • Surface Roughness:         <4 nm
  • EPI ready surface and packing



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