MTI  |  SKU: IPZncA50D035C1US

InP-(VGF- Grown) (111)A Zn- doped, P-type, 2"x 0.35mm wafer, 1sp - IPZncA50D035C1US

€914,25

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InP-(VGF- Grown) (111)A Zn- doped, P-type, 2"x 0.35mm wafer, 1sp - IPZncA50D035C1US

MTI

  • InP  single crystal wafer
  • Growing Method: VGF
  • Orientation: (111)A
  • Size: 2" diameter x (0.3-0.35) mm
  • Doping: Zn- doped
  • Conducting type: S-C-P
  • Polish: one side  polished
  • Resistivity:(3.24-3.29)x10^-1 ohm.cm
  • Mobility: 105-110 cm^2/V.S
  • EPD: N/A
  • Carrier Concerntration:(1.76-1.81) x10^17 /cm^3
  • Ra(Average Roughness) : <4 nm
  • EPI ready surface and packing

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