Ge Wafer Undoped (110) 3" dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm

Ge Wafer Specification

• Growing Method:             CZ
• Orientation:                    (110) +/_0.5 Deg.
• Wafer Size:                    3" dia x  0.5 mm 
• Surface Polishing:          one side optical polished
• Surface finish (RMS or Ra) :  < 30A
• Doping:                           Undoped
• Conductor type:             N-type
• Resistivity:                   >50 Ohms/cm (If you would like to measure the resistivity accurately, 
                                    please order our Portable 4 Probe Resistivity Testing Instrument.)                      
• Package:                       under 1000 class clean room  in wafer container     
  
  

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