Ge Wafer(100). 100mm dia x 0.5 mm, 2SP, P type (Ga doped) R: 0.004-0.01ohm.cm - GEGaa100D05C2BeR0004US

Ge Wafer Specification

• Growing Method:               CZ
• Orientation:                      (100) +/- (0.10-0.16) Deg.
• Primary Flat:                     <110> +/- (0.17-0.20) Deg.
• Wafer Size:                      100mm(+/-0.05mm)  dia x  500 (+/-25 microns  )
• Surface Polishing:             Two sides epi polished
• Surface roughness:           < 5 A ( by AFM)
• Doping:                           Ga Doped
• Conductor type:               P-type
• Resistivity:                       R: 0.004-0.01 ohm.cm (If you would like to measure the resistivity accurately, 
                                       please order our Portable 4 Probe Resistivity Testing Instrument.)
• EPD:                               0
• Package:                         under 1000 class clean room      

Typical Properties:

• Structure:                        Cubic, a = 5.6754Å
•  Density:                          5.323 g/cm3 at room temperature
• Melting Point:                    937.4 ^oC
• Thermal Conductivity:         640