Ge Wafer (111) 2" dia x 0.4 mm, 2SP, P type ( Ga doped) Resistivities: 0.035-0.039ohm-cm

Ge Wafer Specification

• Growing Method:              CZ
• Orientation:                      (111) +/_0.5 Deg.
• Wafer Size:                      2" dia x  400 microns  
• Surface Polishing:            Two sides epi polished
• Surface roughness:           < 8 A ( by AFM)
• Doping:                            Ga Doped
• Conductor type:                P-type
• Resistivity:                       0.035-0.039 Ohms/cm (If you would like to measure the resistivity accurately, 
                                        please order our Portable 4 Probe Resistivity Testing Instrument.)           
• Package:                         under 1000 class clean room      

Typical Properties:

• Structure:                        Cubic, a = 5.6754 A
• Density:                          5.323 g/cm3 at room temperature
• Melting Point:                  937.4 ^oC
• Thermal Conductivity:       640