MTI

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VGF-GaAs (100) N-type Si doped 2" dia x 0.5 mm, 1sp,cc:(0.63-1.17) x 10^18/cm^3

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VGF-GaAs (100) orientation, Si-doped 10x10x 0.5mm, 1sp

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VGF-GaAs (100) orientation, Si-doped 5 x 5 x 0.5mm, 1sp

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VGF-GaAs (100) orientation, Zn-doped 10x10x0.625 mm, 1sp

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VGF-Ge Wafer (100) 100mm dia x 0.5 mm, 1SP, N type ( As- doped), R: 0.088- 0.183ohm.cm

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VGF-Ge Wafer (100) 100mm dia x 0.5 mm, 2SP, N type ( As- doped), R: 0.173-0.25 ohm.cm

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VGF-Ge Wafer (100) with 6 degree miscut toward <111> , 100 mm dia x 0.5 mm, 1SP, P type (Ga doped), R: 0.3-0.33 Ohm.cm - GEGaa100D05C1deg6VGFR03US

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VGF-Ge Wafer(100) . 100 mmdia x 0.175 mm, 1SP, P type ( Ga doped)

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VGF-Ge Wafer(100) . 100 mmdia x 0.175 mm, 2SP, P type ( Ga doped) R:0.1-0.182 ohm.cm

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VGF-Ge Wafer(100) . 50 mmdia x 0.175 mm, 1SP, P type ( Ga doped) R:0.008-0.021 Ohm.cm

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VGF-Ge Wafer(100) . 50 mmdia x 0.175 mm, 2SP, P type ( Ga doped) R:0.008-0.021 Ohm.cm

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VGF-Ge Wafer(100) 100 mm dia x 0.5 mm, 1SP, P type (Ga doped) R:0.128-0.303 Ohm.cm

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VGF-Ge Wafer(100) 100mm dia x 0.5 mm, 2SP, P type ( Ga doped) R:0.128-0.303 Ohm.cm

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VGF-Ge Wafer(100), 100mm dia x 0.4 mm, 2SP, P type (Ga doped), R:0.0038-0.0158 Ohm.cm

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VGF-InAs (111)A, N type, undoped, 2" in dia x 0.5mm, 1sp

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VGF-InAs (111)B, N type, undoped, 2" in dia x 0.5mm, 1sp

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Vibration Sieving System with Three Sieves (100, 200, 450 Mesh) - MSKSYU3N

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W - Tungsten Polycrystalline Metallic Foil: 125 Width x 200 Length x 0.1mm thick - MF-W-Foil-200L

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W Polycrystalline Substrate: 10 x 10 x 0.5 mm, two sides polished

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W Polycrystalline Substrate: 10 x 10 x 0.5 mm,one side polished