Loading...
MTI | SKU:
GASia101005S1US
VGF-GaAs (100) orientation, Si-doped 10x10x 0.5mm, 1sp
€120,41
Unit price
/
Unavailable
Couldn't load pickup availability
Delivery and Shipping to EU
Delivery and Shipping to EU
We will add in the quotation, the shipping, insurance, customs clearance costs.
VGF-GaAs (100) orientation, Si-doped 10x10x 0.5mm, 1sp
€120,41
Unit price
/
Unavailable
VGF-GaAs (100) orientation, Si-doped 10x10x 0.5mm, 1sp
MTI
GaAs single crystal wafer
Growing Method: VGF
Orientation: (100)
Size: 10x10x0.5mm
Polishing: one side polished
Doping: Si doped
Conductor type: S-C-N
Carrier Concentration: (7.2-11.7) x 10^17 /cm^3
Mobility: 2170-2650 cm^2/V.S
EPD: <5000/cm^2
resistivity: (2.56-3.55)x10^-3 ohm.cmGrowing Method: VGF
Orientation: (100)
Size: 10x10x0.5mm
Polishing: one side polished
Doping: Si doped
Conductor type: S-C-N
Carrier Concentration: (7.2-11.7) x 10^17 /cm^3
Mobility: 2170-2650 cm^2/V.S
EPD: <5000/cm^2
Ra(Average Roughness) : < 0.4 nm
