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MTI | SKU:
GAZna101006S1US
VGF-GaAs (100) orientation, Zn-doped 10x10x0.625 mm, 1sp
€106,88
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VGF-GaAs (100) orientation, Zn-doped 10x10x0.625 mm, 1sp
€106,88
Unit price
/
Unavailable
VGF-GaAs (100) orientation, Zn-doped 10x10x0.625 mm, 1sp
MTI
GaAs single crystal wafer
Growing Method: VGF
Orientation: (100)
Size: 10x10x0.625mm
Polishing: one side polished
Doping: Zn doped
Conductor type: P-type
Carrier Concentration: (1.3-2.2) x 10^19 /cm^3
Mobility: 64-75 cm^2/V.S
EPD: <5000/cm^2
resistivity: (4.5-6.7)x10^-3 ohm.cmGrowing Method: VGF
Orientation: (100)
Size: 10x10x0.625mm
Polishing: one side polished
Doping: Zn doped
Conductor type: P-type
Carrier Concentration: (1.3-2.2) x 10^19 /cm^3
Mobility: 64-75 cm^2/V.S
EPD: <5000/cm^2
Ra(Average Roughness) : < 0.4 nm
