VGF-Ge Wafer(100) . 100 mmdia x 0.175 mm, 2SP, P type ( Ga doped) R:0.1-0.182 ohm.cm

Ge Wafer Specification

• Growing Method:                VGF
• Orientation:                        (100) +/-0.5 Deg.
• Wafer Size:                        100(+/_0.4) mm  dia x  175(+/_25) microns
  
• Surface Polishing:              Both  sides  polished
• Surface roughness:             < 8 A ( by AFM)
• Doping:                             Ga Doped
• Conductor type:                 P-type
• Resistivity:                         0.51-0.182 ohm.cm (If you would like to measure the resistivity accurately, 
                                          please order our Portable 4 Probe Resistivity Testing Instrument.)
• Carrier Concentration:         (0.188-1.13) x10^17
  
• Mobility:                            1100-1830 cm^2/v.s.
  
• EPD:                                 <=500 /cm^2 
• Ra(Average Roughness) :    < 0.4 nm
• Package:                           under 1000 class clean room      

Typical Properties:

• Structure:                         Cubic, a = 5.6754Å
•  Density:                           5.323 g/cm3 at room temperature
• Melting Point:                    937.4 ^oC
• Thermal Conductivity:         640