VGF-Ge Wafer (100) with 6 degree miscut toward <111> , 100 mm dia x 0.5 mm, 1SP, P type (Ga doped), R: 0.3-0.33 Ohm.cm - GEGaa100D05C1deg6VGFR03US

Ge Wafer Specification

• Growing Method:                VGF
• Orientation:                        VGF-Ge Wafer (100) with 6 degree miscut toward<111>
• Wafer Size:                       100 mm  dia x  500 microns  
• Surface Polishing:              One side polished
• Surface roughness:            < 8 A ( by AFM)
• Doping:                              Ga Doped
• Conductor type:                 P-type
• Resistivity:                        0.3-0.33 ohm.cm (If you would like to measure the resistivity accurately, 
                                          please order our Portable 4 Probe Resistivity Testing Instrument.)
• Carrier Concentration:        (1.01-1.03) x10^16 /c.c
• Mobility:                             1900-2060 cm^2/Vs
• EPD:                                 < 500 /cm^2
• Ra(Average Roughness) :   < 0.4 nm
• Package:                          under 1000 class clean room      

Typical Properties:

• Structure:                          Cubic, a = 5.6754Å
• Density:                             5.323 g/cm3 at room temperature
• Melting Point:                    937.4 ^oC
• Thermal Conductivity:         640