mti

MTI

Ge Wafer (110) 4" dia x 0.5 mm,2SP, N type ( Sb doped) R:0.1-0.5ohm.cm

MTI

Ge Wafer (110) 4" dia x 0.5 mm,2SP, N type ( Sb doped) R:1-5 ohm.cm

MTI

Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, 1SP Resistivity : 0.1-1.1 ohm-cm

MTI

Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, 1SP Resistivity : 1-10 ohm-cm

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Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, 2SP Resistivity : 0.1-0.5 ohm-cm - GEGae50D05C2R01US

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Ge Wafer (110) N-type Undoped, 1" dia x 0.5 mm , 1SP,R:>50 ohm.cm

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Ge Wafer (110) N-type Undoped, 1" dia x 0.5 mm , 2SP,R:>50 ohm.cm

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Ge Wafer (110) N-type Undoped, 2" dia x 0.5 mm, 1SP, R:>50 ohm.cm

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Ge Wafer (110) N-type Undoped, 2" dia x 0.5 mm, 2SP,R:>50 ohm.cm - GEUe50D05C2R50US

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Ge Wafer (110) N-type Undoped, 4" dia x 0.5 mm, 1SP,R:>50 ohm.cm

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Ge Wafer (110) N-type Undoped, 4" dia x 0.5 mm, 2SP,R>50ohm.cm - GEUe101D05C2R50US

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Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 1SP Resistivity: 0.1-1.0 ohm.cm - GESbe50D05C1R01US

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Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 1SP Resistivity: 1-5 ohm.cm

MTI

Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 2SP Resistivity: 0.1-0.5ohm.cm

MTI

Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 2SP Resistivity: 1-5 ohm.cm

MTI

Ge Wafer (111) 2" dia x 0..5 mm, 2SP, N type ( Sb doped), R: 0.05-0.5 ohm-cm

MTI

Ge Wafer (111) 2" dia x 0.4 mm, 2SP, P type ( Ga doped) Resistivities: 0.035-0.039ohm-cm

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Ge Wafer (111) 2" dia x 0.5 mm, 2SP, N type ( Sb doped), R: 10-20 ohm-cm

MTI

Ge Wafer (111) 2" dia x 0.5 mm, 2SP, N type (Sb doped), resistivities: 0.1-1.0 ohm-cm - GEsbc50D05C2R01US

MTI

Ge Wafer (111) 2" dia x 0.5 mm, 2SP, P type ( Ga doped) resistivities: 0.005-0.01ohm-cm