Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, 2SP Resistivity : 0.1-0.5 ohm-cm - GEGae50D05C2R01US

Ge Wafer Specification

• Growing Method:                   CZ
• Orientation:                           (110) +/_0.5 Deg.
• Wafer Size:                          2" dia x  500 microns  
• Surface Polishing:                 Two sides optical polished
• Surface finish (RMS or Ra) :   < 30A
• Doping:                                 Ga-doped
• Conductor type:                     P-type
• Resistivity:                            0.1-0.5 Ohms/cm (If you would like to measure the resistivity accurately, 
                                             please order our Portable 4 Probe Resistivity Testing Instrument.)                       
• Package:                              under 1000 class clean room       

Typical Properties:

• Structure:                             Cubic, a = 5.6754 A
• Density:                                5.323 g/cm3 at room temperature
• Melting Point:                        937.4 ^oC
• Thermal Conductivity:             640