Ge Wafer (111) 2" dia x 0.5 mm, 2SP, N type (Sb doped), resistivities: 0.1-1.0 ohm-cm - GEsbc50D05C2R01US

Ge Wafer Specification

• Growing Method:               CZ
• Orientation:                       (111) +/_0.5 Deg.
• Wafer Size:                       2" dia x  500 microns  
• Surface Polishing:             two side epi polished
• Surface roughness:           < 8 A ( by AFM)
• Doping:                            Sb Doped
• Conductor type:                N-type
• Resistivity:                       0.1-1.0 Ohms/cm (If you would like to measure the resistivity accurately, 
                                        please order our Portable 4 Probe Resistivity Testing Instrument.)
• EPD:                           
• Package:                         under 1000 class clean room      
•   

Typical Properties:

• Structure:                        Cubic, a = 5.6754 A
• Density:                          5.323 g/cm3 at room temperature
• Melting Point:                  937.4 ^oC
• Thermal Conductivity:       640