Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 2SP Resistivity: 0.1-0.5ohm.cm

Ge Wafer Specification

• Growing Method:                    CZ
• Orientation:                            (110) +/_0.5 Deg
• Wafer Size:                            2" dia x  500 microns  
• Surface finish (RMS or Ra) :    Two sides optical polished < 30A
  
• Doping:                                  Sb doped
• Conductor type:                      N-type
• Resistivity:                             0.1-0.5ohm.cm (If you would like to measure the resistivity accurately, 
                                               please order our Portable 4 Probe Resistivity Testing Instrument.)                           
• Package:                               under 1000 class clean room     
   

Typical Properties:

• Structure:                             Cubic, a = 5.6754 A
• Density:                               5.323 g/cm3 at room temperature
• Melting Point:                       937.4 ^oC
• Thermal Conductivity:            640