MTI

MTI

Ge Wafer (100) +/- 0.7 degree 2" dia x 0.5 mm, 2SP, N type ( Sb doped), R:>40 ohm-cm

MTI

Ge Wafer (100) +/- 1 degree, 2" dia x 0.5 mm, 2SP, N type ( Sb doped), resistivities: 0.1-0.5 ohm-cm

MTI

Ge Wafer (100) +/- 2.5 Degree Undoped, 2" dia x 0.5 mm, 1SP, Resistivities: >50 ohm-cm

MTI

Ge Wafer (100) +/-0.7 Degree 2" dia x 0.45 mm, 1SP, N type ( Sb doped), R:>40 ohm-cm

MTI

Ge Wafer (100) 2" dia x 0.45 mm, 2SP, N type (Sb doped), resistivities: 0.001-0.01 ohm-cm

MTI

Ge Wafer (100) 2" dia x 0.5 mm, 1SP, N type (Sb doped), resistivity:2.5-2.7ohm-cm - GESba50D05C1R2pt7BeUS

MTI

Ge Wafer (100) 2" dia x 0.5 mm, 1SP, P type ( Ga doped), resistivity: 0.0007-0.002 ohm-cm

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Ge Wafer (100) 2" dia x 0.5 mm, 2SP, N type ( Sb doped), Resistivities: 0.01-0.1ohm-cm

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Ge Wafer (100) 2" dia x 0.5 mm, 2SP, N type ( Sb doped), Resistivities: 1-5 ohm-cm

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Ge Wafer (100) 2" dia x 0.5 mm, 2SP, N type ( Sb doped), resistivities: 10-20 ohm-cm - GEsba50D05C2R10US

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Ge Wafer (100) 2" dia x 0.5 mm, 2SP, P type ( Ga doped), resistivity: 0.0007-0.002 ohm-cm

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Ge Wafer (100) 2" dia x 0.5 mm, 2SP, P type (Ga doped), resistivity: 0.001-0.01 ohm-cm - GEGaa50D05C2R0001US

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Ge Wafer (100) 2" dia x 1.0 mm, 1SP, N type (Sb doped), resistivities: 0.02 ohm-cm - GEsba50D10c1R002US

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Ge Wafer (100) Undoped, 2" dia x 0.5 mm, 1SP, resistivities: >50 ohm-cm - GEUa50D05C1R50US

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Ge Wafer (100) Undoped, 2" dia x 0.5 mm, resistivities: >50 ohm-cm, 2SP - GEUa50D05C2R50US

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Ge Wafer (100) Undoped, 4" dia x 0.5 mm, 2SP, R:>50 ohm-cm

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Ge Wafer (100) with flat (100) 4" dia x 0.5 mm, 1SP, N type (Sb doped) Resistivities: 0.1-0.5 ohm-cm - GESba100D05C1R01US

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Ge Wafer (100) with major flat <110> 100mm dia x 0.5 mm, 1SP, N type (Sb doped) R:0.1-0.5 ohm.cm - GESba100D05C1BeR01US5

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Ge Wafer (100)+/-1.5 degree, Un doped, 2"x0.5 mm, 1SP, R>50 ohm-cm

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Ge Wafer (100)N-type Undoped, 1" dia x 0.5 mm , 2SP,R:>50 ohm.cm - GEUa25D05C2R50