Ge Wafer (100) with major flat <110> 100mm dia x 0.5 mm, 1SP, N type (Sb doped) R:0.1-0.5 ohm.cm - GESba100D05C1BeR01US5

Ge Wafer Specification

• Growing Method:              CZ
• Orientation:                      (100) +/- (0.21-0.25) Deg.
  Major Flat:                        <110> +/- (0.11-0.19) Deg.
  
• Wafer Size:                      100mm dia x  500 microns  
• Surface Polishing:            One side epi polished
• Surface roughness:           < 5 A ( by AFM)
• Doping:                            Sb Doped
• Conductor type:                N-type
• Resistivity:                       0.1-0.5 Ohms.cm (If you would like to measure the resistivity accurately, 
                                        please order our Portable 4 Probe Resistivity Testing Instrument.)
• EPD:                               <500 /cm^2
• Package:                         under 1000 class clean room      

Typical Properties:

• Structure:                        Cubic, a = 5.6754Å
• Density:                           5.323 g/cm3 at room temperature
• Melting Point:                   937.4 ^oC
• Thermal Conductivity:        640