Ge Wafer (100) 2" dia x 0.5 mm, 2SP, P type (Ga doped), resistivity: 0.001-0.01 ohm-cm - GEGaa50D05C2R0001US

Ge Wafer Specification

• Growing Method:              CZ
• Orientation:                      (100) +/_0.5 Deg.
• Wafer Size:                      2" dia x  500 microns  
• Surface Polishing:            Two  sides  epi polished
• Surface roughness:          RMS or Ra:~ 10 A(By AFM)
• Doping:                           Ga Doped
• Conductor type:                P-type
• Resistivity:                       0.001-0.01 Ohms/cm (If you would like to measure the resistivity accurately, 
                                        please order our Portable 4 Probe Resistivity Testing Instrument.)                         
• Package:                         under 1000 class clean room      

Typical Properties:

• Structure:                        Cubic, a = 5.6754 A
• Density:                          5.765 g/cm3
• Melting Point:                  937.4 ^oC
• Thermal Conductivity:       640