Ge Wafer (100) +/- 1 degree, 2" dia x 0.5 mm, 2SP, N type ( Sb doped), resistivities: 0.1-0.5 ohm-cm

Ge Wafer Specification

• Growing Method:               CZ
• Orientation:                       (100)+/- 1 ^o
  
• Wafer Size:                       2" dia x  500 microns  
• Surface Polishing:             Two sides epi polished
• Surface roughness:           RMS or Ra:~ 10 A ( by AFM)
• Doping:                            Sb Doped
• Conductor type:                N-type
• Resistivity:                       0.1-0.5  Ohms/cm (If you would like to measure the resistivity accurately, 
                                         please order our Portable 4 Probe Resistivity Testing Instrument.)                      
• Package:                         under 1000 class clean room        

Typical Properties:

• Structure:                         Cubic, a = 5.6754 A
• Density:                           5.323 g/cm3 at room temperature
• Melting Point:                   937.4 ^oC
• Thermal Conductivity:        640