MTI  |  SKU: GAUe50D05C2US5

GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 2sp - GAUe50D05C2-US

€343,85

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GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 2sp - GAUe50D05C2-US

MTI

  • GaAs single crystal wafer
  • Growing Method: VGF
  • Orientation: (110)
  • Size: 2" dia x 0.5mm 
  • Polishing: two sides polished
  • Doping: undoped, 
  • Conductor type:  SI (Semi-insulating )
  • Carrier Concentration: N/A
  • Mobility: 3710-6230 cm^2/V.S
  • EPD: N/A
  • Resistivity: (0.8-4.8)E8 ohm.cm
  • Ra(Average Roughness) : < 0.4 nm
  • EPI ready surface and packing


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