Crystal Substrate A-Z

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GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 1sp,cc: (1.65-3.92) x 10^18 /cm^3

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GaAs ,Growing Method: VGF (111)B , SI, undoped, 4" dia x 0.625 mm, 2sp

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GaAs ,Growing Method: VGF (111)B , SI, undoped, 100mm dia x 0.625 mm, 1 sp

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GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.5mm, 1sp, Prime Grade - GATea50D05C1deg2US

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GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2US

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Ga:ZnO (0001) N+ type, Ga doped, 10x10x0.5mm, 1sp Zn face polished

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Ga2O3-Beta Single Crystal Substrate, <100>+/-1 degree N-type ,Sn-doped 10x10x0.5mm, 1SP

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Ga2O3-Beta Single Crystal Substrate, <100>+/-1 degree N-type ,Fe-doped 10x10x0.5mm, 1SP

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Ga2O3-beta Single Crystal Substrate, <010>+/-1 degree ori, 5 x 5 x 0.35mm, 2SP, Research grade with "Twin"

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Ga2O3-Beta Single Crystal Substrate, <010>+/-1 degree ori, 10x10x0.35mm, 2SP, Research grade with "Twin"

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Ga2O3-Beta Single Crystal Substrate, <-201> ori, 5x5x0.6mm, 1SP

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Ga2O3 - Beta, Single Crystal Substrate, <-201> ori, 10x10x0.6mm, 1SP - GaO101006C1ori201US5

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FZ Si Wafer (111), 2" dia x 0.275 mm, 1SP, P type, B doped R>1000 ohm-cm

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FZ Si Wafer (100), 2" dia x 0.3 mm, 1SP, P type, B doped R>1000 ohm-cm

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FLAAT GaN (0001) Template( N+ ,Si-doped) on Sapphire N+ , 2"x 15um,1sp - FmGaNSionALc50D15C1US

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Fe:SrTiO3 (111) 10x10x0.5mm 1sp (Fe doped 0.005 wt%) - STOFec101005S1

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Fe:Al2O3 (0001) 10x10x0.5mm 1sp (Fe doped 0.05 -0.1% wt )

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Fe: SrTiO3 (111) 5x5x0.5mm, 1sp, (Fe doped 0.005 wt %) - STOFec050505S1

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Fe: SrTiO3 (110) 5x3x0.5mm, 1sp, ( Fe doped 0.01 wt %)

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Fe: SrTiO3 (100) 5x5x0.5mm, 1sp, ( Fe doped 0.01 wt %)