Ga:ZnO (0001) N+ type, Ga doped, 10x10x0.5mm, 1sp Zn face polished

Crystal Structure

Hexagonal:   a= 3.252 A ,  c = 5.313 A

Growth Method

Melt

Hardness

4 moh scale

Density

~5.0 g/cm³

Melt Point

1975 ^oC

Band gap

3.37 eV

Specific  heat

0.125 cal/gm

Conductivity

N type

Resistivity

 0.1-0.001- ohm-cm  +/-  factor of 2 , N type

Thermal conductivity

0.006 cal/cm/ ^oK

Thermal expansion

2.90 x 10-6/^oK

Dislocation Density

< 4 x 10⁴ /cm²

Availability of Standard Substrate

Orientation

<0001>

Polished surface

EPI polished  on one side or two sides to Ra < 10 Å

Standard Size

10x10 mm ,  5 x 5 mm 

Thickness

  0.5 mm