MTI  |  SKU: GaO101005S1ori100DopedSnUS5

Ga2O3-Beta Single Crystal Substrate, <100>+/-1 degree N-type ,Sn-doped 10x10x0.5mm, 1SP

€1.834,25


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Ga2O3-Beta Single Crystal Substrate, <100>+/-1 degree N-type ,Sn-doped 10x10x0.5mm, 1SP

MTI

Substrate Specifications:
  • Chmistry:                    ß-Ga2O3  
  • Structure:                    Monoclinic
  • Lattice Constant:         a=12.23A, b=3.04A, c=5.80A, ß=103.7°
  • Orientation:                  <100>   +/-1°   ( Please pay attention a, b, c axis defination above )
  • Type/Dopant:               N type ,Sn-doped
  • Size:                          10x10 x 0.5 mm
  • Polish:                        one side polished
  • Resistivity:                <0.01 ohm.cm
  • Surface roughness:      < 15A
  • Useful Area:              >80%

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