Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 1SP Resistivity: 1-5 ohm.cm

Ge Wafer Specification

• Growing Method:                  CZ
• Orientation:                          (110) +/_0.5 Deg
• Wafer Size:                          2" dia x  500 microns  
• Surface finish (RMS or Ra) :  One side optical polished < 30A
  
• Doping:                                Sb doped
• Conductor type:                    N-type
• Resistivity:                          1-5 ohm.cm (If you would like to measure the resistivity accurately, 
                                            please order our Portable 4 Probe Resistivity Testing Instrument.)
  
• EPD:                            
• Package:                            under 1000 class clean room     
   

Typical Properties:

• Structure:                           Cubic, a = 5.6754 A
• Density:                              5.323 g/cm3 at room temperature
• Melting Point:                      937.4 ^oC
• Thermal Conductivity:           640