MTI  |  SKU: IAS411ellipes

InAs (411), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS411ellipes

€253,00

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InAs (411), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS411ellipes

MTI

  • Growth method                                     LEC
  • Orientation                                            (411)  ± 0.5  Deg
  • Orientation Flat                                     N/A              
  •  Doping                                                  S doped
  • Conductivity type                                   N type
  • Carrier Concentration                            <7E17 ~ 1E18 / cm3
  •  Mobility                                                >10000 cm2/V.S  
  • EPD                                                     <2E4 / cm 2
  • Standard thickness                                 500 ± 20 mm
  • Size                                                      ellipse shape, (area > 30mm diameter)
  • Polish                                                   one-side


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