MTI  |  SKU: IAUa30D05C1US

InAs (100), undoped 30mm dia wafer 1sp - IAUa30D05C1US

€458,85

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InAs (100), undoped 30mm dia wafer 1sp - IAUa30D05C1US

MTI

  •                         Growth method                                     LEC
  •                         Orientation                                            (100)  ± 0.5  Deg            
  •                         Doping                                                  Undoped
  •                         Conductivity type                                   N type
  •                         Carrier Concentration                            <3E16 / cm3
  •                         Mobility                                                >20000 cm2/V.S  
  •                         EPD                                                     <5E4 / cm 2
  •                         Standard thickness                                 500 ± 20 mm
  •                         Standard diameter                                 30 mm
  •                         Polish                                                   one-side


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