Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (111), 3"dia x 0.50 mm t, N-type ,P-doped 1SP R:5-15 ohm.cm

Thermal oxide Layer

• Research Grade , about 80 % useful  area
  
• SiO2 layer on 3" Silicon wafer
• Oxide layer thickness: 300 nm   ( 3000A)  +/-10%
• Refractive index - 1.455

Silicon Wafer Specifications:

• Conductive type:          N-type/ P-dped 
• Resistivity:                 5-15   ohm.cm   (If you would like to measure the resistivity accurately, 
                                    please order our Portable 4 Probe Resistivity Testing Instrument.) 
• Size:                         3"  +/- 0.5 mm in diameter  x 0.5 mm +/- 0.05 mm th
• Orientation:                (111) +/- 1^o
• Polish:                        one side polished
• Surface roughness, Ra: < 5A (RMS)

• Optional:  you may need tool below to handle the wafer ( click picture to order )

  Diamond Scriber for Cutting Single Crystal Substrate - DS-01	Micro-Fiber & Dust Free Wiper, 4"x4", 100 pcs/bag - Wiper-yx-2001	Vacuum Pen SMT-150C (NEW) - EQ-SMT-150C	Single Wafer Containers

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