Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, N type, As-doped 1SP, R:0.001-0.005 ohm.cm - Fm300SOonSIAsa100D0525C1US

Thermal oxide Layer

• Research Grade , about 80 % useful  area
  
• SiO2 layer on 4'' Silicon wafer
• Oxide layer thickness: 300 nm   ( 3000A)  +/-10%
• Refractive index - 1.455

Silicon Wafer Specifications:

• Conductive type:          N-type/ As-doped 
• Resistivity:                0.001-  0.005 ohm.cm  (If you would like to measure the resistivity accurately, 
                                    please order our Portable 4 Probe Resistivity Testing Instrument.) 
• Size:                         4" diameter +/- 0.5 mm x 0.525 mm
• Orientation:                (100) +/- 1^o
• Polish:                        one side polished
• Surface roughness, Ra: < 5A (RMS)

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