Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, N type, P-doped , 1SP R:1-10 ohm.cm

Thermal oxide Layer

• Research Grade , about 80 % useful  area
  
• SiO2 layer on 4" Silicon wafer
• Oxide layer thickness: 300 nm   (3000A)  +/-10%
• Growth method - Dry oxidizing at 1000^oC

• Refractive index - 1.455

Silicon Wafer Specifications:

• Conductive type:          N-Type/ P-doped 
• Resistivity:                   1-10 ohm.cm
• Size:                            4" +/- 0.5 mm x 0.5 mm
• Orientation:                 (100) +/- 1^o
• Polish:                         one side polished
• Surface roughness:      < 5A

• Optional:  you may need tool below to handle the wafer ( click picture to order )

  Diamond Scriber for Cutting Single Crystal Substrate - DS-01	Micro-Fiber & Dust Free Wiper, 4"x4", 100 pcs/bag - Wiper-yx-2001	Vacuum Pen SMT-150C (NEW) - EQ-SMT-150C	Single Wafer Containers