Thermal Oxide Wafer: 1000 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, Ptype , 1SP,R:1-20 ohm.cm

Thermal oxide Layer

• Research Grade , about 80 % useful  area
  
• SiO2 layer on 4'' Silicon wafer
• Oxide layer thickness: 1000 nm   ( 10000A)  +/-10%
• Refractive index - 1.455

Silicon Wafer Specifications:

• Conductive type:          P-type/ B-doped 
• Resistivity:                  1-10 ohm.cm   (If you would like to measure the resistivity accurately, 
                                    please order our Portable 4 Probe Resistivity Testing Instrument.) 
• Size:                           4" x 0.5mm
• Orientation:                (100) +/- 1^o
• Polish:                        one side polished
• Surface roughness, Ra: < 5A (RMS)

• Optional:  you may need tool below to handle the wafer ( click picture to order )

  Diamond Scriber for Cutting Single Crystal Substrate - DS-01	Micro-Fiber & Dust Free Wiper, 4"x4", 100 pcs/bag - Wiper-yx-2001	Vacuum Pen SMT-150C (NEW) - EQ-SMT-150C	Single Wafer Containers

Related Products

Thin Films  A-Z	Crystal wafer A-Z	Plasma Cleaner	Wafer Containers	Dicing saw	Film Coater