MTI  |  SKU: SiPc101D05C1Deg4R1

Si Wafer (111)with 4 deg. off, 4 " dia x 0.525 mm, 1SP, N Type (P doped), resistivity: 1-10 ohm-cm

€54,05

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Si Wafer (111)with 4 deg. off, 4 " dia x 0.525 mm, 1SP, N Type (P doped), resistivity: 1-10 ohm-cm

MTI

  • Single crystal               Si,    (CZ)
  • Conductivity:               N type ( P doped)
  • Resistivity:                  1-10 ohm-cm  (If you would like to measure the resistivity accurately, 
                                        please order our     Portable 4 Probe Resistivity Testing Instrument.) 
  • Size:                            4" diameter x 0.525 mm
  • Orientation:                 (111)with 4 deg. off,
  • Polish:                         One side polished
  • Surface roughness:       < 5A

Optional:  you may need tool below to handle the wafer ( click picture to order )

Diamond Scriber for Cutting Single Crystal Substrate - DS-01

Micro-Fiber & Dust Free Wiper, 4"x4", 100 pcs/bag - Wiper-yx-2001

Vacuum Pen SMT-150C (NEW) - EQ-SMT-150C

Single Wafer Containers

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