MTI  |  SKU: SiPc101D03C1R15000

Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm

€201,59

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Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm

MTI

  • Single Crystal:          Si   
  • Growth Method:       FZ (Floating Zone)
  • Type/Dopant:           N/Phosphorus
  • Orientation:             (111) 
  • Resistivity:               15,000 - 25,000 ohm-cm
  • Diameter:                100 mm +/- 0.5 mm
  • Thickness:               0.3 mm +/- 0.025 mm
  • Primary Flat:            <110>  
  • Polish:                     One side polished







Optional:  you may need tool below to handle the wafer ( click picture to order )

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater

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