MTI  |  SKU: SIBc50D01C1R1US

Si Wafer (111) 2" dia x 0.1 mm, 1SP, P type, B doped, R:1-10 ohm.cm - SIBc50D01C1R1US

€75,69


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Si Wafer (111) 2" dia x 0.1 mm, 1SP, P type, B doped, R:1-10 ohm.cm - SIBc50D01C1R1US

MTI

  • Single crystal             Silicon   
  • Conductive type:      P type/ Boron doped 
  • Resistivity:                1-10 ohm.cm  (If you would like to measure the resistivity accurately, 
                                      please order our
     Portable 4 Probe Resistivity Testing Instrument.) 
  • Size:                         50.8 diameter +/- 0.5 mm x 0.1 +/- 0.025 mm
  • Orientation:               (111) +/- 1o
  • Polish:                      One  side  polished
  • Surface roughness:    < 5A


 Optional:  you may need tool below to handle the wafer ( click picture to order )