MTI  |  SKU: SIBa101D0275C1R05

Si Wafer (100), 4 " dia x 0.275 mm, P Type B doped, 1SP, Resistivities: 0.5 - 2.0 ohm-cm

€106,88

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Si Wafer (100), 4 " dia x 0.275 mm, P Type B doped, 1SP, Resistivities: 0.5 - 2.0 ohm-cm

MTI

  • Single Crystal:               Si   
  • Growth Method:            CZ
  • Type/Dopant:                P/Boron
  • Orientation:                  (100) 
  • Resistivity:                    0.5 - 2.0 ohm-cm  (If you would like to measure the resistivity accurately, 
                                             please order our     Portable 4 Probe Resistivity Testing Instrument.) 
  • Diameter:                     100 mm
  • Thickness:                    0.275 mm +/- 0.020 mm
  • Primary Flat:                 <110>  
  • Polish:                          One side polished
  • Minority-Carrier Lifetime:  100 us







Optional:  you may need tool below to handle the wafer ( click picture to order )

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