SGGG - Gd2.6Ca0.4Ga4.1Mg0.25Zr0.65O12, (111), 5x5x0.5mm, 1sp
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SGGG - Gd2.6Ca0.4Ga4.1Mg0.25Zr0.65O12, (111), 5x5x0.5mm, 1sp
SGGG - Gd2.6Ca0.4Ga4.1Mg0.25Zr0.65O12, (111), 5x5x0.5mm, 1sp
MTI
SGGG single crystal, e.g. substituted gadolinium gallium garnet is grown by CZ method . SGGG substrate is excellent for for growing bismuth-substituted iron garnet epitaxial films
- Composition: Gd2.6Ca0.4)Ga4.1Mg0.25Zr0.65O12
- Size: 5 mm x 5 mm x 0.5 mm
- Orientation: (111) +/-0.5°
- Polish: one side EPI polished
- Surface Roughness: < 10A by AFM 5x5 microm area
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Physical Properties of SGGG |
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Composition |
Gd2.6Ca0.4)Ga4.1Mg0.25Zr0.65O12 |
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Crystal Structure |
Cubic: a =12.480 Å , |
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Molecular wDielectric constanteight |
968,096 |
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Melt Point |
~1730 oC |
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Density |
~ 7.09 g/cm3 |
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Hardness |
~ 7.5 ( mohns) |
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Refractive index |
1.95 |
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Dielectric constant |
30 |
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Dielectric loss tangent (10 GHz) |
ca. 3.0 * 10_4 |
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Crystal growth method |
Czochralski |
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Crystal growth direction |
<111> |
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XRD |
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