MTI  |  SKU: ISUcB50D05C1US

InSb (111)B 2" dia x 0.5 mm, Undoped, N type, one side polished - ISUcB50D05C1US

€1.949,25

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InSb (111)B 2" dia x 0.5 mm, Undoped, N type, one side polished - ISUcB50D05C1US

MTI

2" InSb  wafer   (N type, undoped)

  •  Size:                      2" dia x 0.5mm  thick
  • Orientation            <111>B +/-0.5o  with two reference flats
  •  Polishing:            one side  polished ( back side etched )
  • Packing:               Sealed under nitrogen with single wafer container  in 1000 class clean room

Properties

  • Growth method                                                 LEC
  • Orientation                                                         (111)B  +/- 0.5o
  • Orientation Flat                                                          
  • Doping                                                                Undoped
  • Conductivity type                                               N type
  • Carrier Concentration                                    5E13-3E14 @77K
  • Mobility                                                            >400000 cm^2/V.s   
  • EPD                                                                <500 cm^-2

     

 

 

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