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MTI | SKU:
IPUcB50D035C1US
InP-VGF Grown (111)B undoped, 2"x0.35 mm wafer, 1sp
€799,25
Unit price
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Unavailable
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Delivery and Shipping to EU
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InP-VGF Grown (111)B undoped, 2"x0.35 mm wafer, 1sp
€799,25
Unit price
/
Unavailable
InP-VGF Grown (111)B undoped, 2"x0.35 mm wafer, 1sp
MTI
- InP single crystal wafer
- Orientation: (111)B
- Size: 2" diameter x 0.35mm
- Doping: undoped
- Conducting type: N Type, Semi-Conducting
- Resistivity: (2-5)E-1 ohm.cm
- Carrier Concentration:(3.0-6.0)E15 /c.c.
- Mobility:3900-4570cm^2/v.s
- Polish: one side polished
- Ra(Average Roughness) : < 0.4 nm
- EPD: N/A
- EPI ready surface and packing
