MTI  |  SKU: IPScA50D05C1US

InP - (VGF-Grown), (111)A, S doped, 2" x 0.5mm wafer, 1sp - IPScA50D05C1US

€914,25

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InP - (VGF-Grown), (111)A, S doped, 2" x 0.5mm wafer, 1sp - IPScA50D05C1US

MTI

  • InP  single crystal wafer
  • Growing Method:              VGF
  • Orientation:                      (111)A
  • Size:                               2" diameter x 0.5 mm
  • Doping:                            S- doped
  • Conducting type:              S-C-N
  • Polish:                             one side  polished
  • Resistivity:                       (0.87-1.19)x10^-3 ohm.cm
  • Mobility:                          1400-1670 cmE2/V.S
  • EPD:                               N/A
  • Carrier Concentration:      (3.15-5.15) x10^18 /cm^3
  • Surface Roughness:         <4 nm
  • EPI ready surface and packing



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